What are the unique properties and advantages of silicon carbide over other materials?
Time：
2024-01-05
Compared to first generation (silicon-based) semiconductors, third generation semiconductors have a large forbidden band width, high electrical conductivity and high thermal conductivity.
Compared to first generation (silicon-based) semiconductors, third generation semiconductors have a large forbidden band width, high electrical conductivity and high thermal conductivity. The forbidden band width of third-generation semiconductors is nearly three times as wide as that of first- and second-generation semiconductors, providing greater resistance to high voltage and high power. Silicon carbide is more suitable as a substrate material. Choose silicon carbide epitaxy in the field of high voltage and high reliability, and gallium nitride epitaxy in the field of high frequency.
Silicon carbide substrate devices are small in size. Due to the high bandwidth of silicon carbide, silicon carbide power devices can withstand higher voltages and power, its device size can become smaller, about 1/10 of the silicon-based devices. silicon carbide device resistance is smaller. Similarly, due to the higher forbidden bandwidth of silicon carbide, silicon carbide devices can be re-doped, silicon carbide device resistance will become even lower, about 1/100 of the silicon-based device. silicon carbide substrate materials with less energy loss. At the same voltage and conversion frequency, the energy loss of silicon carbide MOSFET inverter is about 29%-60% of the energy loss of silicon-based IGBT at 400V; at 800V, the energy loss of silicon carbide MOSFET inverter is about 30%-50% of the energy loss of silicon-based IGBT.
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